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Show Hamamatsu Avalanche Photo Diode 0611004860 - Archived data from Tue, 29. November 2016 11:53:15 CET


This is all the information about APD 0611004860. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0611004860
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E12
Break-through voltage: 451 V
Voltage for Gain 100 (T=+25°C): 423 V
Dark current: 26.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 634
Position in grid: 0
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: 29. Nov 2016
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
17. Apr 2021 01:09:51 CEST jreher Updated APD location via API.
29. Nov 2016 11:53:15 CET markus.moritz Entered return for assembly date.
21. Nov 2016 17:44:54 CET Tobias Assigned to grid via information extracted from APD DB.
21. Nov 2016 17:26:50 CET tobias Manually added based on APD lab DB export.