RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 2306024649 - Archived data from Thu, 23. June 2016 11:58:07 CEST


This is all the information about APD 2306024649. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2306024649
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E07
Break-through voltage: 410 V
Voltage for Gain 100 (T=+25°C): 381.3 V
Dark current: 3.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 420
Position in Box: 17
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
05. May 2021 13:31:43 CEST oafedulidis found in box 420/17
03. Feb 2021 18:07:36 CET jreher Updated APD location via API.
23. Jun 2016 11:58:07 CEST Tobias Imported from Hamamatsu datasheet.