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Show Hamamatsu Avalanche Photo Diode 2013022400 - Archived data from Mon, 21. December 2020 16:15:26 CET


This is all the information about APD 2013022400. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2013022400
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Gießen
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E08
Break-through voltage: 402 V
Voltage for Gain 100 (T=+25°C): 373.8 V
Dark current: 22.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 406
Position in Box: 17
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
16. Apr 2021 22:08:14 CEST jreher Updated APD characteristics via API.
08. Feb 2021 11:12:35 CET jreher Updated APD location via API.
05. Feb 2021 15:56:37 CET jreher Updated box and position via API.
21. Dec 2020 16:15:26 CET jreher Updated APD batch assignment via API.
09. Oct 2020 14:35:28 CEST jreher Updated APD location via API.
23. Jun 2016 11:53:56 CEST Tobias Imported from Hamamatsu datasheet.