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Show Hamamatsu Avalanche Photo Diode 2004021756 - Archived data from Fri, 16. April 2021 22:01:54 CEST


This is all the information about APD 2004021756. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2004021756
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F08
Break-through voltage: 408 V
Voltage for Gain 100 (T=+25°C): 380.1 V
Dark current: 9.1 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 366
Position in Box: 31
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 379.9901918 V     T = -25 °C: 344.640026 V
Voltage for Gain 150: T = +20 °C: 387.8039669 V     T = -25 °C: 351.9865693 V
Voltage for Gain 200: T = +20 °C: 392.1323811 V     T = -25 °C: 356.1150075 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.633308881 V-1     T = -25 °C: 4.745776792 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.319875908 V-1     T = -25 °C: 9.671569797 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.70893502 V-1     T = -25 °C: 15.41446087 V-1
Break-through voltage: T = +20 °C: 407.2715462 V     T = -25 °C: 371.2216807 V
   
Notes:


Version history

Time Author Change comment
05. May 2021 12:32:54 CEST oafedulidis found apd in box 366/31
16. Apr 2021 22:01:54 CEST jreher Updated APD characteristics via API.
23. Jun 2016 11:52:44 CEST Tobias Imported from Hamamatsu datasheet.