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Show Hamamatsu Avalanche Photo Diode 2004021751 - Archived data from Thu, 16. January 2020 11:58:45 CET


This is all the information about APD 2004021751. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2004021751
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B07
Break-through voltage: 410 V
Voltage for Gain 100 (T=+25°C): 381.6 V
Dark current: 19.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: 21. Aug 2019
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
16. Jan 2020 12:06:17 CET jreher Updated date sent for analysis after screening via API.
16. Jan 2020 12:04:27 CET jreher Updated annealing info via API.
16. Jan 2020 12:01:37 CET jreher Updated irradiation info via API.
16. Jan 2020 11:58:45 CET jreher Updated arrival for irradiation via API.
16. Jan 2020 11:57:44 CET jreher Updated arrival for irradiation via API.
23. Jun 2016 11:52:44 CEST Tobias Imported from Hamamatsu datasheet.