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Show Hamamatsu Avalanche Photo Diode 1909020992 - Archived data from Tue, 11. August 2020 18:08:39 CEST


This is all the information about APD 1909020992. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1909020992
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C08
Break-through voltage: 409 V
Voltage for Gain 100 (T=+25°C): 380.9 V
Dark current: 13.8 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 22
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 382.1929954 V     T = -25 °C: 344.2801265 V
Voltage for Gain 150: T = +20 °C: 390.0195156 V     T = -25 °C: 348.5417167 V
Voltage for Gain 200: T = +20 °C: 395.0322328 V     T = -25 °C: 354.6125198 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.514873917 V-1     T = -25 °C: 19.20129796 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.966177667 V-1     T = -25 °C: 12.39177849 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.96179911 V-1     T = -25 °C: 8.492900596 V-1
Break-through voltage: T = +20 °C: 408.5107368 V     T = -25 °C: 372.035358 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:23 CET jreher Updated box and position via API.
11. Aug 2020 18:08:39 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:01 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:49:02 CEST Tobias Imported from Hamamatsu datasheet.