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Show Hamamatsu Avalanche Photo Diode 1905020599 - Archived data from Tue, 11. August 2020 18:08:44 CEST


This is all the information about APD 1905020599. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1905020599
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E05
Break-through voltage: 401 V
Voltage for Gain 100 (T=+25°C): 372.3 V
Dark current: 11.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 48
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 354.4240408 V     T = -25 °C: 337.7625329 V
Voltage for Gain 150: T = +20 °C: 365.8381316 V     T = -25 °C: 344.9404666 V
Voltage for Gain 200: T = +20 °C: 372.6098815 V     T = -25 °C: 348.9874088 V
Gain/Voltage slope at M = 100: T = +20 °C: 3.255062808 V-1     T = -25 °C: 5.177282899 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 6.052027817 V-1     T = -25 °C: 9.821763098 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 8.989996723 V-1     T = -25 °C: 15.70218286 V-1
Break-through voltage: T = +20 °C: 400.0305999 V     T = -25 °C: 364.0524462 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:26 CET jreher Updated box and position via API.
11. Aug 2020 18:08:44 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:03 CEST jreher Updated APD location via API.
29. Jun 2020 16:08:03 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:48:52 CEST Tobias Imported from Hamamatsu datasheet.