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Show Hamamatsu Avalanche Photo Diode 1904020539 - Archived data from Tue, 11. August 2020 18:08:36 CEST


This is all the information about APD 1904020539. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1904020539
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D04
Break-through voltage: 406 V
Voltage for Gain 100 (T=+25°C): 377.4 V
Dark current: 24.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 318
Position in Box: 45
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 435.983375 V     T = -25 °C: 302.3724516 V
Voltage for Gain 150: T = +20 °C: 435.983375 V     T = -25 °C: 316.4009231 V
Voltage for Gain 200: T = +20 °C: 435.983375 V     T = -25 °C: 325.2312516 V
Gain/Voltage slope at M = 100: T = +20 °C: 1.707846969 V-1     T = -25 °C: 2.707020699 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 1.707846969 V-1     T = -25 °C: 4.601298715 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 1.707846969 V-1     T = -25 °C: 6.95628303 V-1
Break-through voltage: T = +20 °C: 427.3694391 V     T = -25 °C: 368.9625488 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:29:10 CET jreher Updated box and position via API.
11. Aug 2020 18:08:36 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:45:51 CEST jreher Updated APD location via API.
21. Jul 2020 14:45:42 CEST jreher Updated box and position via API.
23. Jun 2016 11:48:51 CEST Tobias Imported from Hamamatsu datasheet.