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Show Hamamatsu Avalanche Photo Diode 1903020488 - Archived data from Tue, 11. August 2020 18:08:33 CEST


This is all the information about APD 1903020488. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1903020488
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D11
Break-through voltage: 409 V
Voltage for Gain 100 (T=+25°C): 380.6 V
Dark current: 19.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 318
Position in Box: 31
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 405.6499018 V     T = -25 °C: 304.5494484 V
Voltage for Gain 150: T = +20 °C: 406.8800457 V     T = -25 °C: 318.782804 V
Voltage for Gain 200: T = +20 °C: 407.5834637 V     T = -25 °C: 327.743947 V
Gain/Voltage slope at M = 100: T = +20 °C: 27.61693447 V-1     T = -25 °C: 2.663983276 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 56.27796121 V-1     T = -25 °C: 4.495134299 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 82.19325317 V-1     T = -25 °C: 6.618188307 V-1
Break-through voltage: T = +20 °C: 408.6903853 V     T = -25 °C: 372.1651736 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:29:09 CET jreher Updated box and position via API.
11. Aug 2020 18:08:33 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:45:50 CEST jreher Updated APD location via API.
21. Jul 2020 14:45:41 CEST jreher Updated box and position via API.
23. Jun 2016 11:48:49 CEST Tobias Imported from Hamamatsu datasheet.